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| Name | Value |
|---|---|
| Product Status | Not For New Designs |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 4.4mOhm @ 80A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 253µA |
| Gate Charge (Qg) (Max) @ Vgs | 160 nC @ 10 V |
| Vgs (Max) | +5V, -16V |
| Input Capacitance (Ciss) (Max) @ Vds | 11300 pF @ 25 V |
| FET Feature | - |
| Power Dissipation (Max) | 137W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO220-3-1 |
| Package / Case | TO-220-3 |
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