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TPN4R806PL,L1Q

TPN4R806PL,L1Q

TPN4R806PL,L1Q

Toshiba Semiconductor and Storage

MOSFET N-CH 60V 72A 8TSON

TPN4R806PL,L1Q Техническая спецификация

compliant

-

HongKong/Shenzhen Warehouse

DHL/Fedex/UPS/TNT/SF/EMS

TPN4R806PL,L1Q Цены и заказ

Количество Цена за единицу товара Цена внешн.
1 $0.97000 $0.97
500 $0.9603 $480.15
1000 $0.9506 $950.6
1500 $0.9409 $1411.35
2000 $0.9312 $1862.4
2500 $0.9215 $2303.75
Inventory changes frequently.

TPN4R806PL,L1Q Purchase Assurance: Buy Confidently, Use Securely

Transparent & Traceable Sources

We source exclusively from verified channels to ensure authenticity:

  • Direct from manufacturer and OEMs
  • Authorized distributors
  • Market-vetted traders (3+ years stable supply)

Every batch is traceable with documented proof of origin.

Quality Inspection Process

We enforce strict checks to ensure components meet standards:

  • Visual: Appearance, markings, packaging, batch codes
  • X-ray: Pad consistency (on request)
  • Function test: Sample checks for specific models (upon request)
  • Reports: Available upon request
Flexible Payments & Terms

We adapt to your project needs:

  • T/T, PayPal, Credit Card
  • Credit terms for long-term partners (e.g., monthly, Net 15/30)
Reliable After-Sales Support

365 Days warranty with streamlined solutions:

  • Defective? Free returns/replacements
  • Fast reshipment or refund
  • Full-service sourcing: Procurement & payment support
Оптовые цены на каждый заказ, большой или маленький
Оптовые цены на каждый заказ, большой или маленький
Оптовые цены на каждый заказ, большой или маленький
Оптовые цены на каждый заказ, большой или маленький

TPN4R806PL,L1Q Toshiba Semiconductor and Storage

Имя Ценить
статус продукта Active
тип fet N-Channel
технология MOSFET (Metal Oxide)
Напряжение сток-исток (vdss) 60 V
ток - непрерывный сток (id) при 25°c 72A (Tc)
напряжение привода (макс. количество выстрелов, мин. количество выстрелов) 4.5V, 10V
rds на (макс) @ id, vgs 3.5mOhm @ 36A, 10V
vgs(th) (макс) @ id 2.5V @ 300µA
заряд затвора (qg) (макс.) @ vgs 29 nC @ 10 V
вгс (макс) ±20V
входная емкость (ciss) (макс.) @ vds 2770 pF @ 30 V
особенность fet -
рассеиваемая мощность (макс.) 630mW (Ta), 104W (Tc)
рабочая температура 175°C
тип крепления Surface Mount
пакет устройства поставщика 8-TSON Advance (3.1x3.1)
упаковка / кейс 8-PowerVDFN
Q1: What is the purchase guide for TPN4R806PL,L1Q?
TPN4R806PL,L1Q of Toshiba Semiconductor and Storage is a MOSFET N-CH 60V 72A 8TSON. ICHOME is a long-term spot supplier of TPN4R806PL,L1Q, supporting sample purchase and bulk order.
Q2: How to find the detailed information of TPN4R806PL,L1Q?
Download TPN4R806PL,L1Q Техническая спецификация
Q3: What payment can support in ICHOME?
PayPal, Payoneer, Visa, Bank Transfer, AliExpress.
Q4: Where do you sourcingTPN4R806PL,L1Q from?
After 21 years of long-term and stable development, ICHOME have accumulated leading supply chain partner.
Q5: Can you provide TPN4R806PL,L1Q alternative/replacement suggestions?
Through different levels of industry applications, ICHOME engineers will analyze component risks (discontinued, single source, etc.) and give you TPN4R806PL,L1Q replacement suggestions, and then provide you with alternative products, supporting free sample delivery.
Q6: Why choose ICHOME?
Compared with ordinary agents, ICHOME provides full BOM matching, EOL judgment, alternative model suggestions, large stock + flexible procurement, test reports, return service
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