TRS3E65F,S1Q

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TRS3E65F,S1Q

Номер детали производителя:TRS3E65F,S1Q

Производитель:Toshiba Semiconductor and Storage

Описание:PB-F DIODE TO-220-2L V=650 IF=3A

Техническая спецификация:TRS3E65F,S1Q Техническая спецификация

Статус RoHs:compliant

Пакет кейсов:-

Shipped from:HongKong/Shenzhen Warehouse

Delivery:DHL/Fedex/UPS/TNT/SF/EMS

Количество	Цена за единицу товара	Цена внешн.
1	$2.08000	$2.08
500	$2.0592	$1029.6
1000	$2.0384	$2038.4
1500	$2.0176	$3026.4
2000	$1.9968	$3993.6
2500	$1.976	$4940

В наличии: 182 items

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TRS3E65F,S1Q Purchase Assurance: Buy Confidently, Use Securely

Transparent & Traceable Sources

We source exclusively from verified channels to ensure authenticity:

Direct from manufacturer and OEMs
Authorized distributors
Market-vetted traders (3+ years stable supply)

Every batch is traceable with documented proof of origin.

Quality Inspection Process

We enforce strict checks to ensure components meet standards:

Visual: Appearance, markings, packaging, batch codes
X-ray: Pad consistency (on request)
Function test: Sample checks for specific models (upon request)
Reports: Available upon request

Flexible Payments & Terms

We adapt to your project needs:

T/T, PayPal, Credit Card
Credit terms for long-term partners (e.g., monthly, Net 15/30)

Reliable After-Sales Support

365 Days warranty with streamlined solutions:

Defective? Free returns/replacements
Fast reshipment or refund
Full-service sourcing: Procurement & payment support

Оптовые цены на каждый заказ, большой или маленький

Технические характеристики
Техническая спецификация

TRS3E65F,S1Q Toshiba Semiconductor and Storage

Name: TRS3E65F,S1Q
Brand: ICHome Technology
SKU: TRS3E65F,S1Q
Price: 0.001 USD
Availability: InStock
Rating: 98 (19808 reviews)

Имя	Ценить
статус продукта	Active
тип диода	Silicon Carbide Schottky
напряжение - постоянное обратное (vr) (макс.)	650 V
ток - средний выпрямленный (io)	3A (DC)
напряжение - прямое (vf) (макс.) @ if	1.6 V @ 3 A
скорость	No Recovery Time > 500mA (Io)
время обратного восстановления (trr)	0 ns
ток - обратная утечка @ vr	20 µA @ 650 V
емкость @ vr, f	12pF @ 650V, 1MHz
тип крепления	Through Hole
упаковка / кейс	TO-220-2
пакет устройства поставщика	TO-220-2L
рабочая температура - переход	175°C (Max)

Q1: What is the purchase guide for TRS3E65F,S1Q?: TRS3E65F,S1Q of Toshiba Semiconductor and Storage is a PB-F DIODE TO-220-2L V=650 IF=3A. ICHOME is a long-term spot supplier of TRS3E65F,S1Q, supporting sample purchase and bulk order.

Q2: How to find the detailed information of TRS3E65F,S1Q?: Download TRS3E65F,S1Q Техническая спецификация

Q3: What payment can support in ICHOME?: PayPal, Payoneer, Visa, Bank Transfer, AliExpress.

Q4: Where do you sourcingTRS3E65F,S1Q from?: After 21 years of long-term and stable development, ICHOME have accumulated leading supply chain partner.

Q5: Can you provide TRS3E65F,S1Q alternative/replacement suggestions?: Through different levels of industry applications, ICHOME engineers will analyze component risks (discontinued, single source, etc.) and give you TRS3E65F,S1Q replacement suggestions, and then provide you with alternative products, supporting free sample delivery.

Q6: Why choose ICHOME?: Compared with ordinary agents, ICHOME provides full BOM matching, EOL judgment, alternative model suggestions, large stock + flexible procurement, test reports, return service