Welcome to ichome.com!
| Name | Value |
|---|---|
| Product Status | Obsolete |
| FET Type | 2 N-Channel (Half Bridge) |
| FET Feature | Silicon Carbide (SiC) |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 444A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.3mOhm @ 400A, 20V |
| Vgs(th) (Max) @ Id | 4V @ 105mA |
| Gate Charge (Qg) (Max) @ Vgs | 1127nC @ 20V |
| Input Capacitance (Ciss) (Max) @ Vds | 19.5nF @ 1000V |
| Power - Max | 3000W |
| Operating Temperature | 175°C (TJ) |
| Mounting Type | - |
| Package / Case | Module |
| Supplier Device Package | Module |
Dedicated to exceeding your expectations. IChome: Customer service redefined for the electronics industry.